Title

Nbti Reliability On High-K Metal-Gate Sige Transistor And Circuit Performances

Abstract

Negative-bias temperature instability (NBTI) on high-k metal-gate SiGe p-channel MOSFETs has been examined. SiGe p-MOSFETs shows reduced interface states and enhanced NBTI reliability compared to their Si p-channel control devices as evidenced by experimental data. Impact of NBTI reliability on digital and RF circuits has been also examined using extracted fresh and stressed BSIM4 model parameters in circuit simulation. High-k metal-gate SiGe pMOSFETs demonstrate less inverter pull-up delay, smaller noise figure of a cascode low-noise amplifier, and larger output power and power-added efficiency than their Si counterparts when subject to NBTI stress. © 2010 Elsevier Ltd. All rights reserved.

Publication Date

5-1-2011

Publication Title

Microelectronics Reliability

Volume

51

Issue

5

Number of Pages

914-918

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2010.12.015

Socpus ID

79953663683 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/79953663683

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