Title

Studies On The Effect Of Hydrogen Doping During Deposition Of Al:Zno Films Using Rf Magnetron Sputtering

Keywords

Hydrogen doped ZnO; rf sputtering; Zinc oxide; ZnO:Al

Abstract

Aluminum doped ZnO (ZnO:Al) films were deposited using rf magnetron sputtering in the presence of hydrogen gas in the chamber. A comparative study of the films deposited with and without hydrogen was performed. The XPS studies indicated that the decrease in resistivity of ZnO:Al films with the introduction of hydrogen gas is attributed to the reduced adsorption of oxygen species in the film grain boundaries. The average percentage transmission in the visible region of the films was around 92-95% and band gap was found to be about in the range of 3.15-3.17 eV. The lowest resistivity of 1.8 × 10 -4 Ω cm was achieved for the ZnO:Al film deposited with hydrogen. © 2012 Elsevier B.V. All rights reserved.

Publication Date

12-1-2012

Publication Title

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volume

177

Issue

20

Number of Pages

1777-1782

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.mseb.2012.08.026

Socpus ID

84868191203 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84868191203

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