Title

Evolution Of Cu/Sio2 And Cu/Ta Interface Roughness With Annealing

Abstract

The scattering of conduction electrons by surface roughness has been considered a key contribution to increased resistivity of nanoscale Cu conductors. To study the evolution of surface (interface) roughness with annealing, a series of SiO2 and Ta/SiO2 encapsulated Cu thin films were prepared. Samples were subsequently annealed at 150° and 600° for 30 minutes in a reducing gas to assess the thermal stability of the Cu interfaces and the tendency for void formation. Specular X-ray reflectivity was used to separately determine the root mean square roughness for both the upper and the lower Cu/SiO2 (or Cu/Ta) interfaces. Notable differences in the roughness evolution between upper and lower interfaces were observed for SiO2 encapsulated thin films. The Ta/SiO2 encapsulated films are found to evolve little as compared to the SiO2 encapsulated films. © 2010 Materials Research Society.

Publication Date

11-29-2010

Publication Title

Advanced Metallization Conference (AMC)

Number of Pages

147-154

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

78649246128 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/78649246128

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