Title

Improvement Of Surge Protection By Using An Algan/Gan-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor

Abstract

In this paper, a varactor with metal-semiconductor-metal diodes on top of the (NH4)2S/P2S5-treated AlGaN/GaN two-dimensional electron gas epitaxial structure (MSM-2DEG) is proposed to the surge protection for the first time. The sulfur-treated MSM-2DEG varactor properties, including current-voltage (I-V), capacitance-voltage (C-V), and frequency response of the proposed surge protection circuit, are presented. To verify its capability of surge protection, we replace the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit with the sulfur-treated MSM-2DEG varactor under the application conditions of system-level surge tests. The measured results show that the proposed surge protection circuit, consisted of a gas discharge arrester (GDA) and a sulfur-treated MSM-2DEG varactor, can suppress an electromagnetic pulse (EMP) voltage of 4000 to 360 V, a reduction of 91%, whereas suppression is to 1780 V, a reduction of 55%, when using only a GDA. © 2012 The Japan Society of Applied Physics.

Publication Date

12-1-2012

Publication Title

Japanese Journal of Applied Physics

Volume

51

Issue

12

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1143/JJAP.51.124201

Socpus ID

84872507689 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84872507689

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