Title
Ir Detection In Wide-Gap Semiconductors Using Extreme Nondegenerate Two-Photon Absorption
Abstract
We compare GaAs and GaN for IR detection using extremely non-degenerate two-photon absorption. While the small gap material has larger ND-2PA and hence better sensitivity to IR, unwanted background from degenerate 2PA outweighs this advantage. © 2012 OSA.
Publication Date
12-6-2012
Publication Title
2012 Conference on Lasers and Electro-Optics, CLEO 2012
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
84870354665 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84870354665
STARS Citation
Pattanaik, Himansu S.; Fishman, Dmitry A.; Webster, Scott; Hagan, David J.; and Van Stryland, Eric W., "Ir Detection In Wide-Gap Semiconductors Using Extreme Nondegenerate Two-Photon Absorption" (2012). Scopus Export 2010-2014. 4138.
https://stars.library.ucf.edu/scopus2010/4138