Title

Fast Surge Suppression By Inserting An Algan/Gan-Based Varactor

Keywords

AlGaN/GaN-based varactor; Fast intrusive pulse (FIP); metal-semiconductor-metal (MSM) structure; Surge protection

Abstract

In this report, a metal-semiconductor-metal varactor diodes on top of an AlGaN/GaN-based epitaxial structure is proposed to the fast surge protection application. The fabricated device's capacitance-voltage (C-V) property and surge immunity are presented. In addition, to verify its capability for slow and fast surge absorption, three protection configurations; the gas discharge arrestor (GDA) only, in a state-of-the-art surge protection circuit, and the proposed circuit with AlGaN/GaN-based varactor were all under the system-level lightning and Electrostatic Discharge surge tests. The measured results show that the proposed fast surge protection circuit can suppress a fast intrusive pulse (FIP) voltage of 4000 V to 360 V, a reduction of 91 %; whereas that suppresses to 1780 V only, a reduction of 55 %, by using a traditional GDA only. © 2012 IEEE.

Publication Date

6-11-2012

Publication Title

2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings

Number of Pages

3251-3253

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/CECNet.2012.6202003

Socpus ID

84861845127 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84861845127

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