Title

Cmos Transistor Amplifier Temperature Compensation: Modeling And Analysis

Keywords

Gate biasing; low-noise amplifier (LNA); noise figure; temperature compensation; variability

Abstract

The effect of temperature variations on a cascode low-noise MOS amplifier is analyzed. A gate biasing scheme for temperature compensation is illustrated. RF circuit simulation results show that the low-noise amplifier with temperature compensation can reduce temperature variation effect on the noise figure of the amplifier over a wide range of temperatures. Analytical equations to predict temperature compensation effect are also presented. © 2012 IEEE.

Publication Date

6-14-2012

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

12

Issue

2

Number of Pages

376-381

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2011.2180388

Socpus ID

84861999207 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84861999207

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