Title
Cmos Transistor Amplifier Temperature Compensation: Modeling And Analysis
Keywords
Gate biasing; low-noise amplifier (LNA); noise figure; temperature compensation; variability
Abstract
The effect of temperature variations on a cascode low-noise MOS amplifier is analyzed. A gate biasing scheme for temperature compensation is illustrated. RF circuit simulation results show that the low-noise amplifier with temperature compensation can reduce temperature variation effect on the noise figure of the amplifier over a wide range of temperatures. Analytical equations to predict temperature compensation effect are also presented. © 2012 IEEE.
Publication Date
6-14-2012
Publication Title
IEEE Transactions on Device and Materials Reliability
Volume
12
Issue
2
Number of Pages
376-381
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TDMR.2011.2180388
Copyright Status
Unknown
Socpus ID
84861999207 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84861999207
STARS Citation
Zhang, Yuying and Yuan, Jiann Shiun, "Cmos Transistor Amplifier Temperature Compensation: Modeling And Analysis" (2012). Scopus Export 2010-2014. 4231.
https://stars.library.ucf.edu/scopus2010/4231