Title
Temperature And Voltage Impact On Intermodulation Distortion Of Planar Barium Strontium Titanate Varactors
Keywords
barium strontium titanate; intermodulation distortion; two-tone measurements
Abstract
Measured capacitance vs. voltage data along with measured 3 rd-order intermodulation distortion (IMD) data at various bias and temperatures are presented for interdigital barium strontium titanate varactors. A dip/sweet spot is observed in the 3rd-order intermodulation distortion products when plotted vs. input RF power. The dips occur at RF power levels near 20 dBm and are an important consideration for large signal applications of BST varactors. Shifts in the dip are reported as the bias voltage is varied from 0-50V. Non-linear modeling methods are also discussed. © 2012 IEEE.
Publication Date
7-13-2012
Publication Title
2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/WAMICON.2012.6208466
Copyright Status
Unknown
Socpus ID
84863614080 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84863614080
STARS Citation
Price, Tony; Weller, Thomas; Shen, Ya; and Gong, Xun, "Temperature And Voltage Impact On Intermodulation Distortion Of Planar Barium Strontium Titanate Varactors" (2012). Scopus Export 2010-2014. 4323.
https://stars.library.ucf.edu/scopus2010/4323