Title
Challenges Of Electrostatic Discharge (Esd) Protection In Silicon Nanowire Technology
Abstract
Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of modern and future integrated circuits, including the high-voltage, low-voltage, and emerging nanowire technologies. © 2012 IEEE.
Publication Date
7-30-2012
Publication Title
2012 28th International Conference on Microelectronics - Proceedings, MIEL 2012
Number of Pages
11-13
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/MIEL.2012.6222788
Copyright Status
Unknown
Socpus ID
84864225956 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84864225956
STARS Citation
Liou, Juin J., "Challenges Of Electrostatic Discharge (Esd) Protection In Silicon Nanowire Technology" (2012). Scopus Export 2010-2014. 4351.
https://stars.library.ucf.edu/scopus2010/4351