Title

Metallization Of The Β-Sic(100) 3 × 2 Surface: A Dft Investigation

Keywords

Density functional theory; Diffusion; Metallization; SiC

Abstract

Using density functional theory (DFT) we report results for the electronic structure and vibrational dynamics of hydrogenated silicon carbide (001) (3 × 2) surfaces with various levels of hydrogenation. These results were obtained using density functional theory with a generalized gradient exchange correlation function. The calculations reveal that metallization can be achieved via hydrogen atoms occupying the second silicon layer. Further increase of hydrogen occupation on the second silicon layer sites results in a loss of this metallization. For the former scenario, where metallization occurs, we found a new vibrational mode at 1870 cm - 1, which is distinct from the mode associated with hydrogen atoms on the first layer. Furthermore, we found the diffusion barrier for a hydrogen atom to move from the second to the third silicon layer to be 258 meV. © 2012 Elsevier B.V. All rights reserved.

Publication Date

10-1-2012

Publication Title

Surface Science

Volume

606

Issue

19-20

Number of Pages

1471-1474

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.susc.2012.05.027

Socpus ID

84864445633 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84864445633

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