Title

Nldmos Esd Scaling Under Human Metal Model For 40-V Mixed-Signal Applications

Keywords

Electrostatic discharge (ESD); human metal model (HMM); laterally diffused MOS (LDMOS)

Abstract

Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be highly dependent on the type of ESD stress. In particular, the device's ESD robustness does not scale with the device width, and this condition is substantially aggravated during the International Electrotechnical Commission (IEC) 61000-4-2 stress condition. IEC 61000-4-2 is a system-level ESD standard increasingly being adopted in the industry for ESD robustness assessment at the integrated circuit level. A comprehensive evaluation under the IEC 61000-4-2 stress impacting precision circuit designs is introduced in this letter for variable width LDMOS devices fabricated in a 0.18-μm bipolar-CMOS-DMOS process for 40-V mixed-signal applications. © 2012 IEEE.

Publication Date

10-10-2012

Publication Title

IEEE Electron Device Letters

Volume

33

Issue

11

Number of Pages

1595-1597

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2012.2213574

Socpus ID

84867897123 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84867897123

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