Title

Silicon Carbide High-Temperature Packaging Module Fabrication

Abstract

A proposed method for accommodating high-temperature operation has been studied and developed through combined efforts of Advanced Power Electronics Corporation (ApECOR) and University of Central Florida. A novel process is being explored that will ultimately lead to design, fabrication, and verification of high temperature packaging for silicon carbide (SiC) power modules. The process is established to advance the operational capabilities of power modules during high-temperature conditions. Prototype modules were produced and underwent significant testing to establish capability of operation at a minimum temperature of 350 °C with probable expectation of operation in excess of 400 °C. A strenuous thermal cycle testing apparatus was established to rapidly cycle prototype modules between 80 °C and 350 °C in excess of 150 iterations per module. Analysis of the testing data did not exhibit degradation in the module performance characteristics, indicating successful module design performance. Based on the scope and goals of this research effort, further development of the design process is believed to be feasible for progression towards further development and commercialization. © 2013 IEEE.

Publication Date

12-1-2013

Publication Title

1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

Number of Pages

178-181

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/WiPDA.2013.6695591

Socpus ID

84893635790 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84893635790

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