Title
Light-Immune Ph Sensor With Sic-Based Electrolyte-Insulator-Semiconductor Structure
Abstract
An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity. © 2013 The Japan Society of Applied Physics.
Publication Date
12-1-2013
Publication Title
Applied Physics Express
Volume
6
Issue
12
Number of Pages
-
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.7567/APEX.6.127002
Copyright Status
Unknown
Socpus ID
84890604750 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84890604750
STARS Citation
Lin, Yi Ting; Huang, Chien Shiang; Chow, Lee; Lan, Jyun Ming; and Yang, Chia Ming, "Light-Immune Ph Sensor With Sic-Based Electrolyte-Insulator-Semiconductor Structure" (2013). Scopus Export 2010-2014. 5874.
https://stars.library.ucf.edu/scopus2010/5874