Title

Light-Immune Ph Sensor With Sic-Based Electrolyte-Insulator-Semiconductor Structure

Abstract

An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity. © 2013 The Japan Society of Applied Physics.

Publication Date

12-1-2013

Publication Title

Applied Physics Express

Volume

6

Issue

12

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.7567/APEX.6.127002

Socpus ID

84890604750 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84890604750

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