Title
Evaluation Of Electrostatic Discharge (Esd) Characteristics For Bottom Contact Organic Thin Film Transistor
Keywords
bottom contact; Electrostatic discharge (ESD); failure current It2; leakage current; OTFT; TLP; top-contact
Abstract
Electrostatic discharge (ESD) performance of the bottom-contact organic thin-film transistors (OTFT) is investigated experimentally for the first time using the transmission line pulsing technique. The failure currents and leakage currents of OTFTs having different channel lengths and finger structures are characterized. Physical insights and measured data are offered to explain the failure of these devices at relatively low ESD stress level. © 2013 IEEE.
Publication Date
12-23-2013
Publication Title
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/EDSSC.2013.6628187
Copyright Status
Unknown
Socpus ID
84890487599 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84890487599
STARS Citation
Liu, Zhiwei; Dong, Aihua; Ji, Zhuoyu; Wang, Long; and He, Linfeng, "Evaluation Of Electrostatic Discharge (Esd) Characteristics For Bottom Contact Organic Thin Film Transistor" (2013). Scopus Export 2010-2014. 5992.
https://stars.library.ucf.edu/scopus2010/5992