Title
Extraction Of Mobility Degradation And Source-And-Drain Resistance In Mosfets
Keywords
Indirect bidimensional fitting; Mobility degradation; MOSFET; Parameter extraction; Source-and-drain resistance
Abstract
A MOSFET model parameters extraction procedure that overcomes the difficulties of separating the effects of source-and-drain series resistance and mobility degradation factor is presented. Instead of the conventional direct fitting, the present procedure involves the use of indirect bidimensional fitting of the source-to-drain resistance of a single device, as obtained from the below-saturation output characteristics measured at several above-threshold gate voltages. The procedure is verified with a simulated long channel FinFET device with externally added resistances and is later applied to experimental planar bulk DRAM MOSFET devices with channel lengths ranging from 0.23μm to 2.0μm. The procedure is shown to be advantageous in terms of computational efficiency and it is appropriate even with high values of externally added series resistances. For the case of devices with various channel lengths, the accuracy of the procedure is improved if the value of RSD is extracted from the shortest channel length. This value of RSD could be used for extracting the other parameters for devices with longer channel.
Publication Date
9-1-2010
Publication Title
Journal of Integrated Circuits and Systems
Volume
5
Issue
2
Number of Pages
103-109
Document Type
Article
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
78149273204 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/78149273204
STARS Citation
Muci, J.; Latorre Rey, A. D.; García-Sánchez, F. J.; Lugo Muñoz, D. C.; and Ortiz-Conde, A., "Extraction Of Mobility Degradation And Source-And-Drain Resistance In Mosfets" (2010). Scopus Export 2010-2014. 613.
https://stars.library.ucf.edu/scopus2010/613