Title

Influence Of Precursor Gas Ratio And Firing On Silicon Surface Passivation By Apcvd Aluminium Oxide

Keywords

Aluminum oxide; Atmospheric pressure CVD; Passivation; Silicon

Abstract

Using a high throughput, in-line atmosphere chemical vapor deposition (APCVD) tool, we have synthesized amorphous aluminum oxide (AlOx) films from precursors of trimethyl-aluminum (TMA) and O2, yielding a maximum deposition 150 nm min-1 per wafer. For p-type crystalline silicon (c-Si) wafers, excellent surface passivation was achieved with the APCVD AlOx films, with a best maximum effective surface recombination velocity (Seff,max) of 8 cm/s following a standard industrial firing step. The findings could be attributed to the existence of large negative charge (Qf ≈ -3 × 1012 cm-2) and low interface defect density (Dit ≈ 4 × 1011 eV-1 cm-2) achieved by the films. This data demonstrates a high potential for APCVD AlOx to be used in high efficiency, low cost industrial solar cells. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Publication Date

11-1-2013

Publication Title

Physica Status Solidi - Rapid Research Letters

Volume

7

Issue

11

Number of Pages

942-945

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssr.201308092

Socpus ID

84887991708 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84887991708

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