Title

Zno P-N Homojunction Random Laser Diode Based On Nitrogen-Doped P-Type Nanowires

Keywords

Diodes; Nanowires; P-type; Random lasers; ZnO

Abstract

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin film on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated field-effect transistor, as well as low-temperature photoluminescence. The formation of the p-n junction is confirmed by the current-voltage characteristic and electron beam-induced current. The nanowire/thin-film p-n junction acts as random laser diode. The random lasing behavior is demonstrated by using both optical pumping and electrical pumping, with thresholds of 300 kW/cm2 and 40 mA, respectively. The angle-dependant electroluminescence of the device further proves the random lasing mechanism. An output power of 70 nW is measured at a drive current of 70 mA. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Publication Date

2-1-2013

Publication Title

Advanced Optical Materials

Volume

1

Issue

2

Number of Pages

179-185

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/adom.201200062

Socpus ID

84883373975 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84883373975

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