Title

Gan Thin Film Based Light Addressable Potentiometric Sensor For Ph Sensing Application

Abstract

Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si 3N4 ~50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaNbased LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution. © 2013 The Japan Society of Applied Physics.

Publication Date

3-1-2013

Publication Title

Applied Physics Express

Volume

6

Issue

3

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.7567/APEX.6.036601

Socpus ID

84875520669 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84875520669

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