Title

Advanced Low-Voltage Power Mosfet Technology For Power Supply In Package Applications

Keywords

Asymmetric gate resistor; gate voltage pull-down circuit; integration; low-voltage power MOSFET; power loss; source-down structure power MOSFET; stacked-die package; synchronous buck converters

Abstract

In this paper, a high-current dc-dc power supply in package is reported with an emphasis on the design aspects of the low-and high-side power MOSFETs embedded in the power module. A new NexFET structure with its source electrode on the bottom side of the die (source down) is designed to enable an innovative stacked-die PSiP technology with significantly reduced parasitic inductance and package footprint. A gate voltage pull-down circuitry monolithically integrated in the low-side NexFET is introduced to effectively prevent shoot-through faults even when a very low gate threshold voltage is used to reduce conduction and body diode reverse-recovery-related power losses. In addition, an asymmetric gate resistor circuitry is monolithically integrated in the high-side NexFET to minimize voltage ringing at the switch node. With all these novel device technology improvements, the new power supply in package module delivers a significant improvement in efficiency and offers an excellent solution for future high-frequency, high-current-density dc-dc converters. © 1986-2012 IEEE.

Publication Date

3-11-2013

Publication Title

IEEE Transactions on Power Electronics

Volume

28

Issue

9

Number of Pages

4202-4215

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TPEL.2012.2230407

Socpus ID

84874593365 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84874593365

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