Title

Thermo-Mechanical Characterization Of Au-In Transient Liquid Phase Bonding Die-Attach

Keywords

Au-In; die-attach; high temperature; packaging; power semiconductor; reliability; shear strength; silicon carbide; solid liquid interdiffusion; thermal cycling; transient liquid phase bonding; widebandgap

Abstract

Semiconductor die-attach techniques are critically important in the implementation of high-temperature wide-bandgap power devices. In this paper, thermal and mechanical characteristics of Au-In transient liquid phase (TLP) die-attach are examined for SiC devices. Samples with SiC diodes TLP-bonded to copper-metalized silicon nitride substrates are made using several different values for such fabrication properties as gold and indium thickness, Au/In ratio, and bonding pressure. The samples are then characterized for die-attach voiding, shear strength, and thermal impedance. It is found that the Au-In TLP-bonded samples offer a high average shear strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction through the substrate. It is also discovered that some of the fabrication properties have a greater influence on the bond characteristics than others. Overall, TLP bonding remains promising for high-temperature power electronic die-attach. © 2011-2012 IEEE.

Publication Date

4-15-2013

Publication Title

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volume

3

Issue

5

Number of Pages

716-723

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TCPMT.2013.2239702

Socpus ID

84877577809 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84877577809

This document is currently not available here.

Share

COinS