Title

Improved Control Of The Phosphorous Surface Concentration During In-Line Diffusion Of C-Si Solar Cells By Apcvd

Keywords

APCVD; Diffusion; Phosphorus; Silicate glasses; Silicon; Solar cells

Abstract

Emitter formation for industrial crystalline silicon (c-Si) solar cells is demonstrated by the deposition of phosphorous-doped silicate glasses (PSG) on p-type monocrystalline silicon wafers via in-line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high-throughput doping method on cell performance. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Publication Date

5-1-2013

Publication Title

Physica Status Solidi - Rapid Research Letters

Volume

7

Issue

5

Number of Pages

319-321

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssr.201307020

Socpus ID

84877894742 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84877894742

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