Title

Rate Equation Modeling Of Current Injection Efficiency In 1.3-Μm Inas-Ingaas Quantum Dot Lasers

Keywords

Inhomogeneous broadening; Injection efficiency; Quantum dots; Semiconductor laser

Abstract

Cavity length vs. inverse of slope efficiency technique is most widely used to extract the injection efficiency in semiconductor lasers which assumes that all the carriers occupy single energy level in the laser active region. However, QD lasers contain multiple higher lying energy levels in addition to the ground level and have significant carrier capture times which results in the occupation of these higher energy levels. In addition to the multiple energy levels, the density of states of each energy level is inhomogeneously broadened, which leads to the broadening of the gain spectrum as a whole. Inhomogeneous broadening is a result of the random size distribution of QDs grown by the self-assembled growth technique. In this work, we present the results of an above threshold multi-level rate equation model developed to understand the effect of inhomogeneous broadening on the measured low injection efficiencies of InAs-InGaAs based quantum-dot (QD) lasers operating at 1.3 μm. © 2013 Copyright SPIE.

Publication Date

5-29-2013

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

8619

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2005617

Socpus ID

84878131010 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84878131010

This document is currently not available here.

Share

COinS