Title
Impact Of Growth Conditions On Zno Homoepitaxial Films On Zno Substrates By Plasma-Assisted Molecular Beam Epitaxy
Keywords
Homoepitaxy; Molecular Beam Epitaxy; Oxygen plasmal; Photoluminescence; Surface morphology; ZnO
Abstract
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular beam epitaxy. Surface root mean square (rms) roughness below 0.3 nm was achieved on a large range of growth temperatures by growing on ZnO substrates with 0.5 degree miscut angle toward [11̄00] axis. Surface treatment with acid etching and ozone exposure was required to remove contamination such as silica residual and carboxyl and carbonate groups on the surface. Removal of these surface impurities reduces the likelihood of extrinsic defect migration into the epitaxial films. High growth temperature (> 640°C) and oxygen rich conditions were required for films with terrace steps, but resulted in a very low growth rate (∼30nm/h) and low photoluminescence (PL) lifetimes of lower than 50 ps. With moderate growth temperature (∼610°C), higher growth rate and higher PL lifetime with up to 380 ps were achieved. EIT was used for the oxygen plasma to reduce reactive oxygen species etching of the surface, resulting in a higher growth rate and fewer defects in the films. Good crystalline quality was evident in Xray rocking curves with consistent narrow full width at half maximum (FWHM) of (0002), (101̄2) and (202̄1) peaks, indicating low threading dislocations. Both room-temperature and low-temperature photoluminescence indicated high optical quality of the resultant films with few non-radiative recombination centers. © 2013 SPIE.
Publication Date
5-30-2013
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
8626
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.2004873
Copyright Status
Unknown
Socpus ID
84878212564 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84878212564
STARS Citation
Wei, Ming; Boutwell, R. Casey; and Schoenfeld, Winston V., "Impact Of Growth Conditions On Zno Homoepitaxial Films On Zno Substrates By Plasma-Assisted Molecular Beam Epitaxy" (2013). Scopus Export 2010-2014. 7004.
https://stars.library.ucf.edu/scopus2010/7004