Title
Femtosecond Single-Pulse Absorption In Semiconductors With Varying Dopant Concentration
Abstract
The influence of dopant concentration on the absorption of femtosecond mid-IR pulses is described. The measured results are compared to a theoretical absorption model. © Owned by the authors, published by EDP Sciences, 2013.
Publication Date
1-1-2013
Publication Title
MATEC Web of Conferences
Volume
8
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1051/matecconf/20130802011
Copyright Status
Unknown
Socpus ID
84903149057 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84903149057
STARS Citation
Ramme, Mark; Housman, Andrew; Mingareev, Ilya; and Richardson, Martin, "Femtosecond Single-Pulse Absorption In Semiconductors With Varying Dopant Concentration" (2013). Scopus Export 2010-2014. 7581.
https://stars.library.ucf.edu/scopus2010/7581