Title

Investigation On Electrical Properties Of Rf Sputtered Deposited Bcn Thin Films

Abstract

The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. A wiring metal with low resistivity and a high quality insulating film with a low dielectric constant may lead to a reduction of the wiring capacitance. Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters. © The Electrochemical Society.

Publication Date

1-1-2013

Publication Title

ECS Transactions

Volume

53

Issue

29

Number of Pages

53-58

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/05329.0053ecst

Socpus ID

84906841149 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84906841149

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