Title

Oxidation Models For Crystalline Silicon Nanowires

Abstract

Mathematical techniques for calculating the thickness of a grown oxide layer on Silicon nanowires (SiNWs) are described here. Problems of this nature are considered to be "Stefan," or "moving boundary" problems. This is a diffusion problem, but it is primarily the diffusion of oxygen through a solid, silicon dioxide (SiO2), with an interior moving boundary (Si converts to SiO2 as oxygen diffuses up to the boundary and combine with Si) and a growing exterior surface (SiO2 surface expands as the interior absorbs oxygen atoms). © The Electrochemical Society.

Publication Date

1-1-2013

Publication Title

ECS Transactions

Volume

58

Issue

7

Number of Pages

81-85

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/05807.0081ecst

Socpus ID

84904886959 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84904886959

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