Title

Characterization Of Sicn Ceramic Material Dielectric Properties At High Temperatures For Harsh Environment Sensing Applications

Keywords

Ceramic materials; coplanar waveguide (CPW); dielectric resonators (DRs); high-temperature techniques; material characterization; temperature measurement

Abstract

A novel method is presented in this paper to precisely characterize the dielectric properties of silicon carbon nitride (SiCN) ceramic materials at high temperatures for wireless passive sensing applications This technique is based on a high quality factor ( ) dielectrically loaded cavity resonator, which allows for accurate characterization of both dielectric constant and loss tangent. The dielectric properties of SiCN ceramics are characterized from 25 C to 1000 C. Two different metallization processes are implemented for the measurements with the highest temperatures of 500 C and 1000 C, respectively. A custom-made thru-reflect-line calibration kit is used to maximize the measurement accuracy at every temperature point. It is observed that the dielectric constant and loss tangent of the SiCN sample without Boron doping increase from 3.707 to 3.883 and from 0.0038 to 0.0213, respectively, when the temperature is raised from 25 C to 500 C, and for the SiCN with Boron doping (SiBCN), the dielectric constant and loss tangent increase from 4.817 to 5.132 and from 0.0020 to 0.0186, respectively, corresponding to the temperature ranging from 25 C to 1000 C. Experimental uncertainties for extracted and are no more than 0.0004 and 0.0001, respectively. The temperature dependency of Si(B)CN dielectric properties, as well as the dielectrically loaded cavity resonator structure, provides the basis for the development of wireless passive temperature sensors for high-temperature applications. © 1963-2012 IEEE.

Publication Date

1-1-2013

Publication Title

IEEE Transactions on Microwave Theory and Techniques

Volume

61

Issue

2

Number of Pages

960-971

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TMTT.2012.2234476

Socpus ID

84873413232 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84873413232

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