Title
Revisiting Mosfet Threshold Voltage Extraction Methods
Abstract
This article presents an up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-of-the-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations. © 2012 Elsevier Ltd. All rights reserved.
Publication Date
1-1-2013
Publication Title
Microelectronics Reliability
Volume
53
Issue
1
Number of Pages
90-104
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2012.09.015
Copyright Status
Unknown
Socpus ID
84872100614 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84872100614
STARS Citation
Ortiz-Conde, Adelmo; García-Sánchez, Francisco J.; Muci, Juan; Terán Barrios, Alberto; and Liou, Juin J., "Revisiting Mosfet Threshold Voltage Extraction Methods" (2013). Scopus Export 2010-2014. 7890.
https://stars.library.ucf.edu/scopus2010/7890