Title

Revisiting Mosfet Threshold Voltage Extraction Methods

Abstract

This article presents an up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-of-the-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations. © 2012 Elsevier Ltd. All rights reserved.

Publication Date

1-1-2013

Publication Title

Microelectronics Reliability

Volume

53

Issue

1

Number of Pages

90-104

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2012.09.015

Socpus ID

84872100614 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84872100614

This document is currently not available here.

Share

COinS