Title
In Situ Esd Protection Structure For Variable Operating Voltage Interface Applications In 28-Nm Cmos Process
Keywords
28nm CMOS; Converters; Monolithic IO ESD Protection
Abstract
A multiple-discharge-path electrostatic discharge (ESD) cell for protecting input/output (IO) pins with a variable operating voltage (0.5-3.5 V) is presented. This device is optimized for low capacitance and synthesized with the circuit IO components for in situ ESD protection in communication interface applications developed in the 28-nm high-k metal-gate CMOS technology.
Publication Date
12-1-2014
Publication Title
IEEE Transactions on Device and Materials Reliability
Volume
14
Issue
4
Number of Pages
1061-1067
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TDMR.2014.2364719
Copyright Status
Unknown
Socpus ID
84915813511 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84915813511
STARS Citation
Luo, Sirui; Salcedo, Javier A.; Parthasarathy, Srivatsan; Zhou, Yuanzhong; and Hajjar, Jean Jacques, "In Situ Esd Protection Structure For Variable Operating Voltage Interface Applications In 28-Nm Cmos Process" (2014). Scopus Export 2010-2014. 8340.
https://stars.library.ucf.edu/scopus2010/8340