Title
About Ge(Mn) Diluted Magnetic Semiconductor
Keywords
Diluted magnetic semiconductor; Germanium; Magnesium; Spintronics
Abstract
Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscopy, show that the detected ferromagnetic signal is due to surface islands, while Mn atoms on Ge substitutional sites gives no detectable ESR signal. © 2014 Elsevier B.V.
Publication Date
3-15-2014
Publication Title
Materials Letters
Volume
119
Number of Pages
68-70
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.matlet.2014.01.021
Copyright Status
Unknown
Socpus ID
84893082562 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84893082562
STARS Citation
Portavoce, A.; Bertaina, S.; Abbes, O.; Chow, L.; and Le Thanh, V., "About Ge(Mn) Diluted Magnetic Semiconductor" (2014). Scopus Export 2010-2014. 8506.
https://stars.library.ucf.edu/scopus2010/8506