Title
2-Dimensional Transition Metal Dichalcogenides With Tunable Direct Band Gaps: Mos2(1-X)Se2X Monolayers
Keywords
alloys; atomically thin films; bandgap engineering; CVD; molybdenum diselenide; molybdenum disulfide; transition metal dichalcogenides
Abstract
MoS2(1-x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2) to 1.55 eV (pure single-layer MoSe2) permitting straightforward bandgap engineering. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Publication Date
3-5-2014
Publication Title
Advanced Materials
Volume
26
Issue
9
Number of Pages
1399-1404
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1002/adma.201304389
Copyright Status
Unknown
Socpus ID
84897583849 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84897583849
STARS Citation
Mann, John; Ma, Quan; Odenthal, Patrick M.; Isarraraz, Miguel; and Le, Duy, "2-Dimensional Transition Metal Dichalcogenides With Tunable Direct Band Gaps: Mos2(1-X)Se2X Monolayers" (2014). Scopus Export 2010-2014. 8581.
https://stars.library.ucf.edu/scopus2010/8581