Title

Silicon-Controlled Rectifier Stacking Structure For High-Voltage Esd Protection Applications

Keywords

Electrostatic discharge (ESD); high holding voltage; latchup; silicon-controlled rectifier (SCR)

Abstract

Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work. © 2010 IEEE.

Publication Date

8-1-2010

Publication Title

IEEE Electron Device Letters

Volume

31

Issue

8

Number of Pages

845-847

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2010.2050575

Socpus ID

77955161967 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77955161967

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