Title
A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing The Schottky Barriers At The Electrode/Sensing-Material Interfaces
Keywords
Hydrogen sensor; In2O3-doped SnO2; interdigitated electrodes (IDEs); Schottky barrier
Abstract
The hydrogen-sensing performance of a nanosensor integrating interdigitated electrodes with a gap of 100 nm and indium-oxide-doped tin dioxide nanoparticles is investigated at room temperature. The nonlinear behavior observed from the I/V curves of the sensor in air atmosphere indicated the presence of a Schottky barrier contact at the electrode/sensing-material interface. The linear I/V response obtained in hydrogen atmosphere suggested that the Schottky barrier height could be modulated in the presence of hydrogen. At a low applied voltage of 0.4 V and 0.09-vol% hydrogen gas exposure, a very large sensitivity of ∼ 2300 and a short response time of ∼127 s were recorded. © 2010 IEEE.
Publication Date
7-1-2010
Publication Title
IEEE Electron Device Letters
Volume
31
Issue
7
Number of Pages
770-772
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/LED.2010.2049473
Copyright Status
Unknown
Socpus ID
77954145375 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77954145375
STARS Citation
Zhang, Peng; Vincent, Abhilash; Kumar, Amit; Seal, Sudipta; and Cho, Hyoung Jin, "A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing The Schottky Barriers At The Electrode/Sensing-Material Interfaces" (2010). Scopus Export 2010-2014. 861.
https://stars.library.ucf.edu/scopus2010/861