Title
Snapback And Postsnapback Saturation Of Pseudomorphic High-Electron Mobility Transistor Subject To Transient Overstress
Keywords
Electrostatic discharge (ESD); High-electron mobility transistor; Saturation; Snapback
Abstract
The snapback and postsnapback saturation characteristics in a pseudomorphic high-electron mobility transistor (PHEMT) subject to electrostatic discharge (ESD) transient overstress are studied. This is undertaken, for the first time, via transmission line pulsing (TLP)-like 2-D device simulations and benchmarked against TLP measurements. Physical mechanisms underlying the postsnapback behavior and ESD-induced failure are identified and discussed by analyzing TLP-like simulation results rather than extrapolating dc-like numerical simulation data. © 2010 IEEE.
Publication Date
5-1-2010
Publication Title
IEEE Electron Device Letters
Volume
31
Issue
5
Number of Pages
425-427
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/LED.2010.2042029
Copyright Status
Unknown
Socpus ID
77951877610 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77951877610
STARS Citation
Cui, Qiang; Parthasarathy, Srivatsan; Salcedo, Javier A.; Liou, Juin J.; and Hajjar, Jean J., "Snapback And Postsnapback Saturation Of Pseudomorphic High-Electron Mobility Transistor Subject To Transient Overstress" (2010). Scopus Export 2010-2014. 862.
https://stars.library.ucf.edu/scopus2010/862