Title

Snapback And Postsnapback Saturation Of Pseudomorphic High-Electron Mobility Transistor Subject To Transient Overstress

Keywords

Electrostatic discharge (ESD); High-electron mobility transistor; Saturation; Snapback

Abstract

The snapback and postsnapback saturation characteristics in a pseudomorphic high-electron mobility transistor (PHEMT) subject to electrostatic discharge (ESD) transient overstress are studied. This is undertaken, for the first time, via transmission line pulsing (TLP)-like 2-D device simulations and benchmarked against TLP measurements. Physical mechanisms underlying the postsnapback behavior and ESD-induced failure are identified and discussed by analyzing TLP-like simulation results rather than extrapolating dc-like numerical simulation data. © 2010 IEEE.

Publication Date

5-1-2010

Publication Title

IEEE Electron Device Letters

Volume

31

Issue

5

Number of Pages

425-427

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2010.2042029

Socpus ID

77951877610 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77951877610

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