Title

Evaluation Of Transient Behavior Of Polysilicon-Bound Diode For Fast Esd Applications

Keywords

Diodes; ESD; transient behavior; VFTLP

Abstract

Transient behaviors of poly-bound diodes subject to pulses generated by the very fast transmission line pulsing (VFTLP) tester are characterized for fast ESD events such as the charged device model. The effects of changing a diode's dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and polygate configuration under the VFTLP stress is also investigated. © 2006 IEEE.

Publication Date

10-1-2010

Publication Title

IEEE Transactions on Electron Devices

Volume

57

Issue

10

Number of Pages

2736-2743

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2010.2063032

Socpus ID

77957012971 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77957012971

This document is currently not available here.

Share

COinS