Title

Prediction And Modeling Of Thin Gate Oxide Breakdown Subject To Arbitrary Transient Stresses

Keywords

Charged device model (CDM); gate oxide breakdown (GOB); power law (PL); time-dependent dielectric breakdown (TDDB); very fast transmission line pulse (VFTLP)

Abstract

A reliable dielectric breakdown model under transient stresses via an extension of the power law is demonstrated. The model, which is based on the percolation model and the assumption of no significant detrapping, is successfully used in ramped voltage stress breakdown analysis. A demonstration of the model's validity consists of applying repetitive time-variant voltage waveformspulses, sine waves, ramps, and noiseuntil breakdown and, consequently, comparing prediction to reality. The breakdown distribution is initially derived from DC measurements, with the model predicting both the center and the shape of the distribution. © 2006 IEEE.

Publication Date

9-1-2010

Publication Title

IEEE Transactions on Electron Devices

Volume

57

Issue

9

Number of Pages

2296-2305

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2010.2053864

Socpus ID

77956064593 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77956064593

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