Title

Postgrowth Tuning Of The Bandgap Of Single-Layer Molybdenum Disulfide Films By Sulfur/Selenium Exchange

Keywords

atomically thin films; bandgap engineering; CVD; molybdenum diselenide; molybdenum disulfide; sputtering; transition metal dichalcogenides

Abstract

We demonstrate bandgap tuning of a single-layer MoS2 film on SiO2/Si via substitution of its sulfur atoms by selenium through a process of gentle sputtering, exposure to a selenium precursor, and annealing. We characterize the substitution process both for S/S and S/Se replacement. Photoluminescence and, in the latter case, X-ray photoelectron spectroscopy provide direct evidence of optical band gap shift and selenium incorporation, respectively. We discuss our experimental observations, including the limit of the achievable bandgap shift, in terms of the role of stress in the film as elucidated by computational studies, based on density functional theory. The resultant films are stable in vacuum, but deteriorate under optical excitation in air. © 2014 American Chemical Society.

Publication Date

5-27-2014

Publication Title

ACS Nano

Volume

8

Issue

5

Number of Pages

4672-4677

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1021/nn5004327

Socpus ID

84901659524 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84901659524

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