Title

Failure Analysis Of Gate-All-Around Nanowire Field Effect Transistor Under Tlp Test

Keywords

Electrostatic discharge (ESD); Failure analysis; Nanowire FET; TLP

Abstract

Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.

Publication Date

3-13-2014

Publication Title

2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/EDSSC.2014.7061114

Socpus ID

84949925890 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84949925890

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