Title

Decoherence And Quantum Interference Assisted Electron Trapping In A Quantum Dot

Keywords

Electronic states; Electronic transport; Nanostructures; Quantum dots; Semiconductors

Abstract

We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 and 300K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction. Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100K, 63% at 200K and 58% at 300K. Our model provides a novel method of trapping an electron at room temperature. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Publication Date

1-1-2014

Publication Title

Physica Status Solidi (B) Basic Research

Volume

251

Issue

8

Number of Pages

1498-1509

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssb.201350266

Socpus ID

84905572303 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84905572303

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