Title
Decoherence And Quantum Interference Assisted Electron Trapping In A Quantum Dot
Keywords
Electronic states; Electronic transport; Nanostructures; Quantum dots; Semiconductors
Abstract
We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 and 300K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction. Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100K, 63% at 200K and 58% at 300K. Our model provides a novel method of trapping an electron at room temperature. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Publication Date
1-1-2014
Publication Title
Physica Status Solidi (B) Basic Research
Volume
251
Issue
8
Number of Pages
1498-1509
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1002/pssb.201350266
Copyright Status
Unknown
Socpus ID
84905572303 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84905572303
STARS Citation
Halawany, Ahmed El and Leuenberger, Michael N., "Decoherence And Quantum Interference Assisted Electron Trapping In A Quantum Dot" (2014). Scopus Export 2010-2014. 9025.
https://stars.library.ucf.edu/scopus2010/9025