Title

Zno Gate Based Mosfets For Sensor Applications

Abstract

A metal-oxide-semiconductor field-effect transistor (MOSFET) with transparent ZnO as its gate metal was fabricated and its photodetecting capabilities were investigated. For the fabrication of the MOSFET, a four level mask was used. The first level was used for making the diffusion wells for source and drain. The second level to form the via holes for Aluminum deposition followed by the third level to shape the source and drain contact structures. The ZnO gate metal was then deposited by sputtering process. Finally the fourth level mask was used to pattern the ZnO gate metal. The electrical characteristic analysis was performed on the fabricated MOSFETs when different types of light were incident on it.

Publication Date

1-1-2014

Publication Title

ECS Transactions

Volume

61

Issue

26

Number of Pages

65-69

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/06126.0065ecst

Socpus ID

84925233383 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84925233383

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