Title
Evaluating Defects In Solution-Processed Carbon Nanotube Devices Via Low-Temperature Transport Spectroscopy
Keywords
Defects; Electron transport; Nanotube; Single electron transistor; Solution-processed; Transport spectroscopy
Abstract
We performed low-temperature electron transport spectroscopy to evaluate defects in individual single-walled carbon nanotube (SWNT) devices assembled via dielectrophoresis from a surfactant-free solution. At 4.2 K, the majority of the devices show periodic and well-defined Coulomb diamonds near zero gate voltage corresponding to transport through a single quantum dot, while at higher gate voltages, beating behavior is observed due to small potential fluctuations induced by the substrate. The Coulomb diamonds were further modeled using a single electron transistor simulator. Our study suggests that SWNTs derived from stable solutions in this work are free from hard defects and are relatively clean. Our observations have strong implications on the use of solution-processed SWNTs for future nanoelectronic device applications. © 2010 American Chemical Society.
Publication Date
5-25-2010
Publication Title
ACS Nano
Volume
4
Issue
5
Number of Pages
2659-2666
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1021/nn100284j
Copyright Status
Unknown
Socpus ID
77952934062 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77952934062
STARS Citation
Stokes, Paul and Khondaker, Saiful I., "Evaluating Defects In Solution-Processed Carbon Nanotube Devices Via Low-Temperature Transport Spectroscopy" (2010). Scopus Export 2010-2014. 946.
https://stars.library.ucf.edu/scopus2010/946