Title
A Novel Product-Level Human Metal Model Characterization Methodology
Keywords
Electrostatic discharges; human metal model; product level characterization
Abstract
A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits' HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing. © 2001-2011 IEEE.
Publication Date
1-1-2014
Publication Title
IEEE Transactions on Device and Materials Reliability
Volume
14
Issue
2
Number of Pages
772-774
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TDMR.2014.2311298
Copyright Status
Unknown
Socpus ID
84902168023 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84902168023
STARS Citation
Luo, Sirui; Salcedo, Javier A.; Hajjar, Jean Jacques; Zhou, Yuanzhong; and Liou, Juin J., "A Novel Product-Level Human Metal Model Characterization Methodology" (2014). Scopus Export 2010-2014. 9483.
https://stars.library.ucf.edu/scopus2010/9483