Title

A Reliable Si3N4/Al2O3-Hfo 2 Stack Mim Capacitor For High-Voltage Analog Applications

Keywords

Atomic layer deposition (ALD); capacitance density; high-k; metal-insulator-metal (MIM) capacitor; time-dependent dielectric breakdown (TDDB); voltage linearity

Abstract

In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack metal-insulator-metal (MIM) capacitor with a low-leakage characteristic, good voltage linearity, high capacitance density, and excellent time-dependent dielectric breakdown (TDDB) reliability. The capacitor demonstrates a capacitance density of 4.2 fFμ/um2 quadratic voltage coefficients (α) of 106 ppmV2, and 18.92-year TDDB lifetime under a stressing voltage of 6.6 V. For the extended performance, it is projected that such a capacitor can possess a maximum capacitance density of 4.13 fF/μ2 with αle100 ppm/V2 and TDDB lifetime of 10 years under an analog operation of 7 V. Furthermore, this paper shows that α and TDDB lifetime of the new capacitor are very sensitive to the thickness of the Si3N4 film. Comparison of the new MIM capacitors with the SiO2/HfO2 stack MIM capacitors shows that the SiO2/HfO2 capacitor is more suitable for low-voltage applications, whereas the new Si3N4/LAHO capacitor is superior for operations requiring a higher biasing condition. © 2014 IEEE.

Publication Date

1-1-2014

Publication Title

IEEE Transactions on Electron Devices

Volume

61

Issue

8

Number of Pages

2944-2949

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2014.2332046

Socpus ID

84905161091 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84905161091

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