Title

Optimized Pmos-Triggered Bidirectional Scr For Low-Voltage Esd Protection Applications

Keywords

Bidirectional protection; electrostatic discharge (ESD); pMOS-triggered; silicon-controlled rectifier (SCR); trigger voltage.

Abstract

In this paper, an optimized pMOS-triggered bidirectional silicon-controlled rectifier (PTBSCR) fabricated in a 0.18-μm CMOS technology is proposed as a viable electrostatic discharge (ESD) protection solution. Capable of working under both the power-ON and power-OFF conditions, this structure is verified to provide bidirectional ESD protection performance superior to those reported in the literatures. Critical ESD parameters, such as the trigger voltage, holding voltage, and leakage current, can be flexibly adjusted via layout changes. With a low trigger voltage, a small ESD design window, a high robustness, and a small silicon area consumption, the PTBSCR is very suitable for low-voltage and low-power ESD protection applications. © 2014 IEEE.

Publication Date

1-1-2014

Publication Title

IEEE Transactions on Electron Devices

Volume

61

Issue

7

Number of Pages

2588-2594

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2014.2320827

Socpus ID

84903307123 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84903307123

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