Title
Correlation Between Tlp, Hmm, And System-Level Esd Pulses For Cu Metallization
Keywords
Back end of line (BEOL); ESD; IEC system level
Abstract
Correlation factors between different ESD pulse types for different back-end-of-line (BEOL) metal-line topologies have been studied to support system-level on-chip ESD design. The component level (HMM, HBM, and TLP on a wafer) and system-level (IEC gun contact on package) ESD stresses were correlated followed by extraction of correlation factors between the IEC/HMM and TLP, as well as the HBM and TLP supported by analytical approximation. The major conclusions were verified using the thermal coupled mixed-mode simulation analysis. © 2013 IEEE.
Publication Date
1-1-2014
Publication Title
IEEE Transactions on Device and Materials Reliability
Volume
14
Issue
1
Number of Pages
446-450
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TDMR.2013.2292039
Copyright Status
Unknown
Socpus ID
84898453348 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84898453348
STARS Citation
Xi, Y.; Malobabic, S.; Vashchenko, V.; and Liou, J., "Correlation Between Tlp, Hmm, And System-Level Esd Pulses For Cu Metallization" (2014). Scopus Export 2010-2014. 9779.
https://stars.library.ucf.edu/scopus2010/9779