Title
Design Optimization Of Sige Bicmos Silicon Controlled Rectifier For Charged Device Model (Cdm) Protection Applications
Abstract
Silicon Controlled Rectifier (SCR) devices fabricated in a SiGe BiCMOS technology are optimized for Charged Device Model (CDM) Electrostatic Discharge (ESD) protection. This optimization involves combined experimental and Technology Computer Aided Design (TCAD) ESD simulation analysis of the quasi-static current-voltage and transient response characteristics during fast stress conditions. The underlying physical mechanisms critical to the device design are demonstrated based on very fast transmission line pulsing (VFTLP) measurement and physics-based simulation results. © 2013 Elsevier Ltd. All rights reserved.
Publication Date
1-1-2014
Publication Title
Microelectronics Reliability
Volume
54
Issue
1
Number of Pages
57-63
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2013.09.021
Copyright Status
Unknown
Socpus ID
84891659749 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84891659749
STARS Citation
Cui, Qiang; Parthasarathy, Srivatsan; Salcedo, Javier A.; Liou, Juin J.; and Hajjar, Jean J., "Design Optimization Of Sige Bicmos Silicon Controlled Rectifier For Charged Device Model (Cdm) Protection Applications" (2014). Scopus Export 2010-2014. 9804.
https://stars.library.ucf.edu/scopus2010/9804