Title
Tunable Excitation Of Two-Dimensional Plasmon Modes In Ingaas/Inp Hemt Devices For Terahertz Detection
Keywords
2DEG; detector; Graphene; HEMT; Plasmon; terahertz
Abstract
THz electromagnetic waves resonantly excite plasmons in the two dimensional electron gas (2DEG) of high electron mobility transistors (HEMTs) via grating-gate couplers. These excitations can induce measureable photoresponse. Biasing the grating gate tunes the photoresponse via control of 2DEG carrier density. Plasmons are investigated here in an InGaAs/InP HEMT with a 9 μm period grating gate at 78 and 106 GHz free-space radiation and 4K sample temperature. The dependence of the photoresponse on applied Source-Drain bias is also investigated. The minimum noise equivalent power (NEP) is estimated to be 113 pW/Hz1/2, with maximum responsivity of 200 V/W. Such plasmonic alterations in channel conductance provide a means for voltage-Tunable THz and sub-THz detectors or filters.. © 2014 SPIE.
Publication Date
1-1-2014
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
8993
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.2037062
Copyright Status
Unknown
Socpus ID
84897376438 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84897376438
STARS Citation
Esfahani, Nima Nader; Qiao, Xin; Peale, Robert E.; Buchwald, Walter R.; and Hendrickson, Joshua R., "Tunable Excitation Of Two-Dimensional Plasmon Modes In Ingaas/Inp Hemt Devices For Terahertz Detection" (2014). Scopus Export 2010-2014. 9891.
https://stars.library.ucf.edu/scopus2010/9891