Title
Effect Of Location Of Sodium Precursor On The Morphological And Device Properties Of Cigs Solar Cells
Abstract
Sodium plays an important role in the development of device quality CIGS (Cu-In-Ga-Se) and CIGSeS (Cu-In-Ga-Se-S) chalcopyrite thin film solar cells. In this study the effect of location of sodium precursor on the device properties of CIGS solar cells was studied. Reduction in the surface roughness and improvement in the crystallinity and morphology of the absorber films was observed with increase in sodium quantity from 0 Å to 40 Å and to 80 Å NaF. It was found that absorber films with 40 Å and 80 Å NaF in the front of the metallic precursors formed better devices compared to those with sodium at the back. Higher open circuit voltages and short circuit current values were achieved for devices made with these absorber films as well. © 2013 Materials Research Society.
Publication Date
12-12-2013
Publication Title
Materials Research Society Symposium Proceedings
Volume
1538
Number of Pages
51-60
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1557/opl.2013.1053
Copyright Status
Unknown
Socpus ID
84889636166 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84889636166
STARS Citation
Dhere, Neelkanth O.; Kaul, Ashwani; and Moutinho, Helio, "Effect Of Location Of Sodium Precursor On The Morphological And Device Properties Of Cigs Solar Cells" (2013). Scopus Export 2010-2014. 9967.
https://stars.library.ucf.edu/scopus2010/9967