Pdge Contact Fabrication On Ga-Doped Ge: Influence Of Implantation-Mediated Defects

Keywords

Contact; Gallium; Germanium; Palladium; Reaction

Abstract

PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of ~1.4 × 1020 cm−3, the resistivity of the PdGe contact is found to be twice higher than that of undoped Ge. Ga doping has no influence on the Pd reaction with Ge. However, the doping process and the Salicide process led to the formation of Ga-Pd defects in both sides of the PdGe/Ge interface, resulting from Ga and Pd co-segregation on Ge dislocation loops.

Publication Date

6-1-2018

Publication Title

Scripta Materialia

Volume

150

Number of Pages

66-69

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.scriptamat.2018.02.037

Socpus ID

85043358609 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85043358609

This document is currently not available here.

Share

COinS