Title
Pdge Contact Fabrication On Ga-Doped Ge: Influence Of Implantation-Mediated Defects
Keywords
Contact; Gallium; Germanium; Palladium; Reaction
Abstract
PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of ~1.4 × 1020 cm−3, the resistivity of the PdGe contact is found to be twice higher than that of undoped Ge. Ga doping has no influence on the Pd reaction with Ge. However, the doping process and the Salicide process led to the formation of Ga-Pd defects in both sides of the PdGe/Ge interface, resulting from Ga and Pd co-segregation on Ge dislocation loops.
Publication Date
6-1-2018
Publication Title
Scripta Materialia
Volume
150
Number of Pages
66-69
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.scriptamat.2018.02.037
Copyright Status
Unknown
Socpus ID
85043358609 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85043358609
STARS Citation
Luo, T.; Perrin Toinin, J.; Descoins, M.; Hoummada, K.; and Bertoglio, M., "Pdge Contact Fabrication On Ga-Doped Ge: Influence Of Implantation-Mediated Defects" (2018). Scopus Export 2015-2019. 10216.
https://stars.library.ucf.edu/scopus2015/10216