Bright Inverted Quantum-Dot Light-Emitting Diodes By All-Solution Processing
Abstract
An inverted red quantum dot light-emitting diode (QLED) with peak brightness of 75444 cd m-2 was achieved by all solution-processing, thanks to the enhanced coverage of uniform hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer (HIL) film on hydrophobic hole transport layer (HTL), which was enabled by doping PEDOT:PSS with non-ionic surfactant Triton X-100.
Publication Date
1-1-2018
Publication Title
Journal of Materials Chemistry C
Volume
6
Issue
28
Number of Pages
7487-7492
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1039/c8tc02221f
Copyright Status
Unknown
Socpus ID
85050377741 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85050377741
STARS Citation
Triana, Manuel A.; Chen, Hao; Zhang, Dandan; Camargo, Rubén J.; and Zhai, Tianshu, "Bright Inverted Quantum-Dot Light-Emitting Diodes By All-Solution Processing" (2018). Scopus Export 2015-2019. 10293.
https://stars.library.ucf.edu/scopus2015/10293